Aluminum foil for the electronics industry must fulfill the very highest quality requirements. Only the highest purity aluminum is used for manufacturing high-capacitance foil.
The purity of the aluminum increases depending on the operating voltage. For low voltage applications grade AI3N8 is sufficient, while high voltages require AI4N (AI 99.99 %).
An extremely pure process atmosphere is used during the anneal to achieve a uniform Al²O³ layer on the foil surface that in turn promotes the formation of tunnel etching during a subsequent process. The material is processed at annealing temperatures between 550 °C and 620 °C, and the atmosphere dewpoint must be below -30 °C.
To fulfill these strict criteria the anneal has to take place in a furnace with a retort that is both gas-tight and vacuum-tight. The HICON®annealer is ideal for this application.